Strain Induced Electronic and Optical Properties of 2D Silicon Carbide Monolayer Using Density Functional Theory

Using the first principle calculation, we investigated structural, electronic, and strain-dependent optical properties of two-dimensional hexagonal Silicon Carbide (SiC) Monolayer. We found that biaxial compressive strain loading gradually changes direct bandgap SiC into indirect semiconductor. The increases but reduces values static dielectric constant refractive index. Conversely, tensile decreases value result shows electronic can be engineered to desired by applying strain. large issue for monolayer is limiting its uses in different applications which overcome with help